MUN5132DW1T1
vs
BCX70J/T4
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
NEXPERIA
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
LOW NOISE
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
45 V
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
90
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation Ambient-Max |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
0.25 V
|
|
| Base Number Matches |
5
|
2
|
| Date Of Intro |
|
2017-02-01
|
| JEDEC-95 Code |
|
TO-236AB
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transition Frequency-Nom (fT) |
|
250 MHz
|
| Turn-off Time-Max (toff) |
|
800 ns
|
| Turn-on Time-Max (ton) |
|
150 ns
|
|
|
|
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