MUN5111T1
vs
MUN5132DW1T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Transferred
Ihs Manufacturer
LESHAN RADIO CO LTD
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.1 A
0.1 A
DC Current Gain-Min (hFE)
35
15
Number of Elements
1
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.31 W
Surface Mount
YES
YES
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
1
Package Description
SMALL OUTLINE, R-PDSO-G6
HTS Code
8541.21.00.95
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector-Emitter Voltage-Max
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e0
Number of Terminals
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation Ambient-Max
0.15 W
Qualification Status
Not Qualified
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
VCEsat-Max
0.25 V
Compare MUN5111T1 with alternatives
Compare MUN5132DW1T1 with alternatives