MUN5111DW1T1G
vs
PDTA144TE,115
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ONSEMI
NXP SEMICONDUCTORS
Part Package Code
SC-88/SC70-6/SOT-363 6 LEAD
SC-75
Package Description
CASE 419B-02, SC-88, 6 PIN
SMALL OUTLINE, R-PDSO-G3
Pin Count
6
3
Manufacturer Package Code
419B-02
SOT416
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
10 Weeks
4 Weeks
Samacsys Manufacturer
onsemi
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
35
100
JESD-30 Code
R-PDSO-G6
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
1
Number of Terminals
6
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.15 W
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Compare MUN5111DW1T1G with alternatives
Compare PDTA144TE,115 with alternatives