MTP3N60E
vs
MTP3N55
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
SEMICONDUCTOR TECHNOLOGY INC
MOTOROLA INC
Package Description
,
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
75 W
75 W
Surface Mount
NO
NO
Base Number Matches
1
1
Rohs Code
HTS Code
8541.29.00.95
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Case Connection
DRAIN
DS Breakdown Voltage-Min
550 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
2.5 Ω
Feedback Cap-Max (Crss)
80 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
260 ns
Turn-on Time-Max (ton)
150 ns
Compare MTP3N60E with alternatives
Compare MTP3N55 with alternatives