MTP15N06E
vs
BUZ70
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
15 A
12 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
2
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
6 mJ
Drain-source On Resistance-Max
0.15 Ω
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
48 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Compare BUZ70 with alternatives