MTP12N10E
vs
IRF531
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MOTOROLA INC
SEMELAB LTD
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
290 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
100 V
80 V
Drain Current-Max (ID)
12 A
14 A
Drain-source On Resistance-Max
0.16 Ω
0.16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
79 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
33
1
Rohs Code
Part Package Code
SFM
Pin Count
3
Compare MTP12N10E with alternatives
Compare IRF531 with alternatives