MTP10N35
vs
MTP10N25
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
250 V
Drain Current-Max (ID)
10 A
10 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
4
Rohs Code
Package Description
FLANGE MOUNT, R-PSFM-T3
HTS Code
8541.29.00.95
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Case Connection
DRAIN
Drain-source On Resistance-Max
0.45 Ω
Feedback Cap-Max (Crss)
100 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
100 W
Power Dissipation-Max (Abs)
100 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
220 ns
Turn-on Time-Max (ton)
300 ns
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