MTD6P10ET4
vs
MTD5N25E-T4
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
| Package Description |
,
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
Single
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (Abs) (ID) |
6 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
50 W
|
|
| Surface Mount |
YES
|
YES
|
| Base Number Matches |
4
|
1
|
| Avalanche Energy Rating (Eas) |
|
84 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
250 V
|
| Drain Current-Max (ID) |
|
5 A
|
| Drain-source On Resistance-Max |
|
1 Ω
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
15 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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