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MTD5N25ET4 vs MTD5P06V1 feature comparison

MTD5N25ET4 Rochester Electronics LLC

Buy Now Datasheet

MTD5P06V1 Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Package Description DPAK-3 CASE 369D-01, DPAK-3
Pin Count 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 84 mJ 125 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 60 V
Drain Current-Max (ID) 5 A 5 A
Drain-source On Resistance-Max 1 Ω 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 15 A 18 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Manufacturer Package Code CASE 369D-01
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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