MTD3055E vs IRF3710ZSTRLPBF feature comparison

MTD3055E National Semiconductor Corporation

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IRF3710ZSTRLPBF International Rectifier

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 100 V
Drain Current-Max (ID) 8 A 59 A
Drain-source On Resistance-Max 0.15 Ω 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W 160 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 5 2
Pbfree Code Yes
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 200 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 240 A
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

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