MTD2N40E-T4 vs MTD3055V1 feature comparison

MTD2N40E-T4 Motorola Mobility LLC

Buy Now Datasheet

MTD3055V1 Motorola Mobility LLC

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MOTOROLA INC MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 45 mJ 72 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 60 V
Drain Current-Max (ID) 2 A 12 A
Drain-source On Resistance-Max 3.5 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 6 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pin Count 3
Manufacturer Package Code CASE 369A-13
JESD-609 Code e0
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 48 W
Terminal Finish Tin/Lead (Sn/Pb)

Compare MTD2N40E-T4 with alternatives

Compare MTD3055V1 with alternatives