MTD20N06V
vs
MTD20N06VT4G
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
ON SEMICONDUCTOR
|
Package Description |
,
|
CASE 369C-01, DPAK-3
|
Reach Compliance Code |
unknown
|
compliant
|
Configuration |
Single
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (Abs) (ID) |
20 A
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
60 W
|
|
Surface Mount |
YES
|
YES
|
Base Number Matches |
4
|
1
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
CASE 369C-01
|
ECCN Code |
|
EAR99
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
200 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
60 V
|
Drain Current-Max (ID) |
|
20 A
|
Drain-source On Resistance-Max |
|
0.08 Ω
|
JESD-30 Code |
|
R-PSSO-G2
|
Number of Elements |
|
1
|
Number of Terminals |
|
2
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
70 A
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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