MTD1N50E
vs
HUFA75309D3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MOTOROLA INC
INTERSIL CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
45 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
55 V
Drain Current-Max (ID)
1 A
19 A
Drain-source On Resistance-Max
5 Ω
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
3 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
3
JEDEC-95 Code
TO-251AA
Compare MTD1N50E with alternatives
Compare HUFA75309D3 with alternatives