MTB55N10ELT4
vs
MTB55N10EL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA INC
MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description
SMALL OUTLINE, R-PSSO-G2
,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Single
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
55 A
Drain-source On Resistance-Max
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
203 W
203 W
Pulsed Drain Current-Max (IDM)
193 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
3
3
Drain Current-Max (Abs) (ID)
55 A
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