MTB55N06ZT4 vs MTB55N06ZT4 feature comparison

MTB55N06ZT4 Rochester Electronics LLC

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MTB55N06ZT4 Motorola Mobility LLC

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC MOTOROLA INC
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown unknown
Additional Feature ESD PROTECTED AVALANCHE RATED, ESD PROTECTED
Avalanche Energy Rating (Eas) 454 mJ 454 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 55 A 55 A
Drain-source On Resistance-Max 0.018 Ω 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 165 A 165 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 238 pF
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 136 W
Turn-off Time-Max (toff) 484 ns
Turn-on Time-Max (ton) 368 ns

Compare MTB55N06ZT4 with alternatives

Compare MTB55N06ZT4 with alternatives