MTB52N06V vs MTB52N06VL feature comparison

MTB52N06V Motorola Mobility LLC

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MTB52N06VL Rochester Electronics LLC

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Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 406 mJ 406 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 52 A 52 A
Drain-source On Resistance-Max 0.022 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 165 W
Power Dissipation-Max (Abs) 165 W
Pulsed Drain Current-Max (IDM) 182 A 182 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 280 ns
Turn-on Time-Max (ton) 290 ns
Base Number Matches 4 1
Pbfree Code No
Rohs Code No
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MTB52N06V with alternatives

Compare MTB52N06VL with alternatives