MTB40N10E
vs
IRF543
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
ON SEMICONDUCTOR
INTERSIL CORP
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
800 mJ
230 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
80 V
Drain Current-Max (ID)
40 A
25 A
Drain-source On Resistance-Max
0.04 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
235
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
169 W
150 W
Pulsed Drain Current-Max (IDM)
140 A
100 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-220AB
Power Dissipation Ambient-Max
150 W
Turn-off Time-Max (toff)
135 ns
Turn-on Time-Max (ton)
133 ns
Compare MTB40N10E with alternatives
Compare IRF543 with alternatives