MTB30P06VT4 vs MTB30P06V feature comparison

MTB30P06VT4 Motorola Mobility LLC

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MTB30P06V onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ONSEMI
Package Description SMALL OUTLINE, R-PSSO-G2 CASE 418B-04, D2PAK-3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 450 mJ 450 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.08 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 125 W
Pulsed Drain Current-Max (IDM) 105 A 105 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 80 ns
Base Number Matches 1 5
Rohs Code No
Pin Count 3
Manufacturer Package Code CASE 418B-04
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
JESD-609 Code e0
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max (Abs) 125 W
Terminal Finish TIN LEAD

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Compare MTB30P06V with alternatives