MT9VDDT1672HG-335 vs W3EG7218S202BD4 feature comparison

MT9VDDT1672HG-335 Micron Technology Inc

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W3EG7218S202BD4 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.7 ns 0.75 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200 R-XDMA-N200
Memory Density 1207959552 bit 1207959552 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Terminals 200 200
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX72 16MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096
Supply Current-Max 3.195 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code No
Part Package Code MODULE
Package Description DIMM,
Pin Count 200
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) NOT SPECIFIED
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MT9VDDT1672HG-335 with alternatives

Compare W3EG7218S202BD4 with alternatives