MT8VDDT1664AG-202 vs M368L1713BT0-CA2 feature comparison

MT8VDDT1664AG-202 Micron Technology Inc

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M368L1713BT0-CA2 Samsung Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Time-Max 0.8 ns 0.75 ns
Clock Frequency-Max (fCLK) 125 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N184 R-XDMA-N184
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1 1
Number of Terminals 184 184
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX64 16MX64
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096
Standby Current-Max 0.024 A
Supply Current-Max 2.2 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 3 1
Part Package Code DIMM
Package Description ,
Pin Count 184
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V

Compare MT8VDDT1664AG-202 with alternatives

Compare M368L1713BT0-CA2 with alternatives