MT8LSDT864AG-10CXX
vs
EDI4G649EV6D
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
ELECTRONIC DESIGNS INC
|
| Package Description |
,
|
DIMM-168
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.28
|
|
| Access Mode |
FOUR BANK PAGE BURST
|
FAST PAGE WITH EDO
|
| Access Time-Max |
6 ns
|
60 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
|
| JESD-30 Code |
R-XDMA-N168
|
R-XDMA-N168
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM MODULE
|
EDO DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
168
|
168
|
| Number of Words |
8388608 words
|
8388608 words
|
| Number of Words Code |
8000000
|
8000000
|
| Operating Mode |
SYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
8MX64
|
8MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare MT8LSDT864AG-10CXX with alternatives
Compare EDI4G649EV6D with alternatives