MT8LSDT3264HY-133
vs
M464S3254JLS-C7A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
SAMSUNG SEMICONDUCTOR INC
Package Description
DIMM, DIMM144,32
DIMM, DIMM144,32
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.24
Access Time-Max
5.4 ns
5.4 ns
Clock Frequency-Max (fCLK)
133 MHz
133 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-PDMA-N144
R-XDMA-N144
JESD-609 Code
e3
Memory Density
2147483648 bit
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
SYNCHRONOUS DRAM MODULE
Memory Width
64
16
Moisture Sensitivity Level
1
3
Number of Terminals
144
144
Number of Words
33554432 words
16777216 words
Number of Words Code
32000000
16000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
32MX64
16MX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM144,32
DIMM144,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Standby Current-Max
0.016 A
0.016 A
Supply Current-Max
2.16 mA
0.752 mA
Supply Voltage-Nom (Vsup)
3.3 V
3.3 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Part Package Code
MODULE
Pin Count
144
Access Mode
DUAL BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Length
67.6 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Peak Reflow Temperature (Cel)
260
Seated Height-Max
31.75 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Width
3.8 mm
Compare MT8LSDT3264HY-133 with alternatives
Compare M464S3254JLS-C7A with alternatives