MT8HSF3264HDY-667XX vs M368L3324BTM-CC4 feature comparison

MT8HSF3264HDY-667XX Micron Technology Inc

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M368L3324BTM-CC4 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE DIMM
Package Description LEAD FREE, SODIMM-200 DIMM, DIMM184
Pin Count 200 184
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N200 R-XDMA-N184
JESD-609 Code e1
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 184
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 2.7 V
Supply Voltage-Min (Vsup) 1.7 V 2.5 V
Supply Voltage-Nom (Vsup) 1.8 V 2.6 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 1
Access Time-Max 0.65 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code DIMM184
Refresh Cycles 8192
Supply Current-Max 1.8 mA
Terminal Pitch 1.27 mm

Compare MT8HSF3264HDY-667XX with alternatives

Compare M368L3324BTM-CC4 with alternatives