MT5LST6464G-12
vs
HB66D6464BA-8
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
HITACHI LTD
|
Package Description |
DIMM, DIMM160
|
,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
12 ns
|
8 ns
|
Additional Feature |
32K X 8 TAG
|
32K X 8 TAG
|
I/O Type |
COMMON
|
|
JESD-30 Code |
R-XDMA-N160
|
R-XDMA-N160
|
Memory Density |
4194304 bit
|
4194304 bit
|
Memory IC Type |
CACHE TAG SRAM MODULE
|
CACHE TAG SRAM MODULE
|
Memory Width |
64
|
64
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
160
|
160
|
Number of Words |
65536 words
|
65536 words
|
Number of Words Code |
64000
|
64000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
64KX64
|
64KX64
|
Output Characteristics |
3-STATE
|
3-STATE
|
Output Enable |
YES
|
YES
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Code |
DIMM
|
|
Package Equivalence Code |
DIMM160
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Standby Current-Max |
0.023 A
|
|
Standby Voltage-Min |
3.14 V
|
|
Supply Current-Max |
0.99 mA
|
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3.135 V
|
3.1 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
MOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Pitch |
1.27 mm
|
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
|
|
|
Compare MT5LST6464G-12 with alternatives
Compare HB66D6464BA-8 with alternatives