MT55L256L32PB-6
vs
MT55L256V32PB-7.5IT
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
MICRON TECHNOLOGY INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
BGA,
|
BGA,
|
Pin Count |
119
|
119
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
3.5 ns
|
4.2 ns
|
JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B119
|
JESD-609 Code |
e0
|
e1
|
Length |
22 mm
|
22 mm
|
Memory Density |
8388608 bit
|
8388608 bit
|
Memory IC Type |
ZBT SRAM
|
ZBT SRAM
|
Memory Width |
32
|
32
|
Moisture Sensitivity Level |
3
|
|
Number of Functions |
1
|
1
|
Number of Terminals |
119
|
119
|
Number of Words |
262144 words
|
262144 words
|
Number of Words Code |
256000
|
256000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
256KX32
|
256KX32
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
BGA
|
BGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY
|
GRID ARRAY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
2.4 mm
|
2.4 mm
|
Supply Voltage-Max (Vsup) |
3.465 V
|
3.465 V
|
Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1.27 mm
|
1.27 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
14 mm
|
14 mm
|
Base Number Matches |
2
|
2
|
|
|
|
Compare MT55L256L32PB-6 with alternatives
Compare MT55L256V32PB-7.5IT with alternatives