MT4LSDT864LHIG-133XX vs M464S0824ETS-L1L feature comparison

MT4LSDT864LHIG-133XX Micron Technology Inc

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M464S0824ETS-L1L Samsung Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE MODULE
Package Description SODIMM-144 DIMM, DIMM144,32
Pin Count 144 144
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode SINGLE BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 5.4 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N144 R-XDMA-N144
Memory Density 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 8MX64 8MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 235
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code DIMM144,32
Refresh Cycles 4096
Standby Current-Max 0.008 A
Supply Current-Max 0.6 mA
Terminal Pitch 0.8 mm

Compare MT4LSDT864LHIG-133XX with alternatives

Compare M464S0824ETS-L1L with alternatives