MT47H64M16NF-25E:MTR vs MT47H64M16NF-25EIT:MT feature comparison

MT47H64M16NF-25E:MTR Micron Technology Inc

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MT47H64M16NF-25EIT:MT Micron Technology Inc

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Yes
Active Active
MICRON TECHNOLOGY INC MICRON TECHNOLOGY INC
FBGA-84
not_compliant compliant
EAR99 EAR99
8542.32.00.32 8542.32.00.32
MULTI BANK PAGE BURST MULTI BANK PAGE BURST
SELF REFRESH AUTO/SELF REFRESH
R-PBGA-B84 R-PBGA-B84
e1
1073741824 bit 1073741824 bit
DDR2 DRAM DDR2 DRAM
16 16
1 1
1 1
84 84
67108864 words 67108864 words
64000000 64000000
SYNCHRONOUS SYNCHRONOUS
85 °C 95 °C
-40 °C
64MX16 64MX16
PLASTIC/EPOXY PLASTIC/EPOXY
BGA TFBGA
RECTANGULAR RECTANGULAR
GRID ARRAY GRID ARRAY, THIN PROFILE, FINE PITCH
260
YES YES
1.9 V 1.9 V
1.7 V 1.7 V
1.8 V 1.8 V
YES YES
CMOS CMOS
OTHER INDUSTRIAL
TIN SILVER COPPER
BALL BALL
BOTTOM BOTTOM
30
1 1
0.4 ns
400 MHz
COMMON
4,8
12.5 mm
3-STATE
BGA84,9X15,32
8192
AEC-Q100
1.2 mm
4,8
0.038 A
0.26 mA
0.8 mm
8 mm

Compare MT47H64M16NF-25E:MTR with alternatives

Compare MT47H64M16NF-25EIT:MT with alternatives