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MT47H64M16NF-25E:M vs K4T1G164QQ-HLE70 feature comparison

MT47H64M16NF-25E:M Micron Technology Inc

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K4T1G164QQ-HLE70 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 TFBGA, BGA84,9X15,32
Pin Count 84 84
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Factory Lead Time 6 Weeks, 1 Day
Samacsys Manufacturer Micron
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz 400 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm 13 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Width 8 mm 9 mm
Base Number Matches 1 1
Standby Current-Max 0.008 A
Supply Current-Max 0.265 mA
Memory » DRAMs
Memory » DRAMs

Compare MT47H64M16NF-25E:M with alternatives

Compare K4T1G164QQ-HLE70 with alternatives