MT47H16M16BG-3 vs EDE2516AASE-6E-E feature comparison

MT47H16M16BG-3 Micron Technology Inc

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EDE2516AASE-6E-E Elpida Memory Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC ELPIDA MEMORY INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR2 DRAM DDR DRAM
Memory Width 16 16
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Organization 16MX16 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.18 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 26 1
Part Package Code BGA
Package Description TFBGA,
Pin Count 84
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 13.8 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Seated Height-Max 1.12 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Temperature Grade OTHER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 11.3 mm

Compare MT47H16M16BG-3 with alternatives

Compare EDE2516AASE-6E-E with alternatives