MT47H128M8HV-3EL:E vs K4T1G084QC-ZCE6T feature comparison

MT47H128M8HV-3EL:E Micron Technology Inc

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K4T1G084QC-ZCE6T Samsung Semiconductor

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description 8 X 11.50 MM, FBGA-60 FBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e0 e1
Length 11.5 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 8 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60 60
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 128MX8 128MX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA FBGA
Package Equivalence Code BGA60,9X11,32 BGA60,9X11,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8 4,8
Supply Current-Max 0.28 mA 0.28 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD SILVER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260

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