MT47H128M16PK-25EAAT:C
vs
MT47H128M16RT-25EAIT:CTR
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Package Description |
TFBGA,
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
|
| Access Mode |
MULTI BANK PAGE BURST
|
|
| Access Time-Max |
0.4 ns
|
|
| Additional Feature |
AUTO/SELF REFRESH
|
|
| JESD-30 Code |
R-PBGA-B84
|
|
| JESD-609 Code |
e0
|
|
| Length |
12.5 mm
|
|
| Memory Density |
2147483648 bit
|
|
| Memory IC Type |
DDR2 DRAM
|
DDR2 DRAM
|
| Memory Width |
16
|
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
84
|
|
| Number of Words |
134217728 words
|
|
| Number of Words Code |
128000000
|
|
| Operating Mode |
SYNCHRONOUS
|
|
| Operating Temperature-Max |
105 °C
|
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
128MX16
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
TFBGA
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
| Screening Level |
AEC-Q100
|
|
| Seated Height-Max |
1.2 mm
|
|
| Self Refresh |
YES
|
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
|
| Surface Mount |
YES
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
INDUSTRIAL
|
|
| Terminal Finish |
TIN LEAD SILVER
|
TIN SILVER COPPER
|
| Terminal Form |
BALL
|
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
|
| Width |
9 mm
|
|
| Base Number Matches |
1
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MT47H128M16PK-25EAAT:C with alternatives
Compare MT47H128M16RT-25EAIT:CTR with alternatives