MT46V64M8TG-7 vs K4H510838M-TCA00 feature comparison

MT46V64M8TG-7 Micron Technology Inc

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K4H510838M-TCA00 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Time-Max 0.75 ns 0.8 ns
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66 R-PDSO-G66
JESD-609 Code e0
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR DRAM
Memory Width 8 8
Number of Terminals 66 66
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 64MX8 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSSOP TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.003 A
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Pitch 0.635 mm 0.65 mm
Terminal Position DUAL DUAL
Base Number Matches 64 1
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 66
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 22.22 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) 240
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm

Compare MT46V64M8TG-7 with alternatives

Compare K4H510838M-TCA00 with alternatives