MT46V32M16TG-75ZAT:F
vs
AS4DDR32M16DG-75/IT
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICROSS COMPONENTS
|
| Part Package Code |
TSOP
|
TSOP2
|
| Package Description |
TSSOP,
|
0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66
|
| Pin Count |
66
|
66
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.75 ns
|
0.75 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-PDSO-G66
|
R-PDSO-G66
|
| Length |
22.22 mm
|
22.22 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DDR DRAM
|
DDR1 DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
66
|
66
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
105 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
32MX16
|
32MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSSOP
|
TSOP2
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, THIN PROFILE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.65 mm
|
0.65 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
10.16 mm
|
10.16 mm
|
| Base Number Matches |
1
|
1
|
| Clock Frequency-Max (fCLK) |
|
133 MHz
|
| I/O Type |
|
COMMON
|
| Interleaved Burst Length |
|
2,4,8
|
| JESD-609 Code |
|
e4
|
| Output Characteristics |
|
3-STATE
|
| Package Equivalence Code |
|
TSSOP66,.46
|
| Refresh Cycles |
|
8192
|
| Sequential Burst Length |
|
2,4,8
|
| Standby Current-Max |
|
0.005 A
|
| Supply Current-Max |
|
0.35 mA
|
| Terminal Finish |
|
PALLADIUM GOLD
|
|
|
|
Compare MT46V32M16TG-75ZAT:F with alternatives
Compare AS4DDR32M16DG-75/IT with alternatives