MT46H32M16LFBF-6IT
vs
HY5MS7B6BLF-6
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
SK HYNIX INC
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Memory IC Type |
DDR DRAM
|
DDR1 DRAM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Base Number Matches |
5
|
1
|
Part Package Code |
|
BGA
|
Package Description |
|
VFBGA, BGA60,9X10,32
|
Pin Count |
|
60
|
HTS Code |
|
8542.32.00.28
|
Access Mode |
|
FOUR BANK PAGE BURST
|
Access Time-Max |
|
5.5 ns
|
Additional Feature |
|
AUTO/SELF REFRESH
|
Clock Frequency-Max (fCLK) |
|
166 MHz
|
I/O Type |
|
COMMON
|
Interleaved Burst Length |
|
2,4,8
|
JESD-30 Code |
|
R-PBGA-B60
|
Length |
|
10 mm
|
Memory Density |
|
536870912 bit
|
Memory Width |
|
16
|
Number of Functions |
|
1
|
Number of Ports |
|
1
|
Number of Terminals |
|
60
|
Number of Words |
|
33554432 words
|
Number of Words Code |
|
32000000
|
Operating Mode |
|
SYNCHRONOUS
|
Operating Temperature-Max |
|
85 °C
|
Operating Temperature-Min |
|
-25 °C
|
Organization |
|
32MX16
|
Output Characteristics |
|
3-STATE
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Code |
|
VFBGA
|
Package Equivalence Code |
|
BGA60,9X10,32
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Qualification Status |
|
Not Qualified
|
Refresh Cycles |
|
8192
|
Seated Height-Max |
|
1 mm
|
Self Refresh |
|
YES
|
Sequential Burst Length |
|
2,4,8
|
Standby Current-Max |
|
0.0003 A
|
Supply Current-Max |
|
0.11 mA
|
Supply Voltage-Max (Vsup) |
|
1.95 V
|
Supply Voltage-Min (Vsup) |
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
|
1.8 V
|
Surface Mount |
|
YES
|
Technology |
|
CMOS
|
Temperature Grade |
|
OTHER
|
Terminal Form |
|
BALL
|
Terminal Pitch |
|
0.8 mm
|
Terminal Position |
|
BOTTOM
|
Width |
|
8 mm
|
|
|
|
Compare MT46H32M16LFBF-6IT with alternatives
Compare HY5MS7B6BLF-6 with alternatives