MT41K512M16TNA-107:E
vs
IS43TR16512B-093NBLI
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
INTEGRATED SILICON SOLUTION INC
|
Package Description |
TFBGA,
|
TFBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
8542.32.00.36
|
Access Mode |
DUAL BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B96
|
R-PBGA-B96
|
JESD-609 Code |
e1
|
e1
|
Length |
14 mm
|
14 mm
|
Memory Density |
8589934592 bit
|
8589934592 bit
|
Memory IC Type |
DDR DRAM
|
DDR3 DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
96
|
96
|
Number of Words |
536870912 words
|
536870912 words
|
Number of Words Code |
512000000
|
512000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Organization |
512MX16
|
512MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
1.425 V
|
1.575 V
|
Supply Voltage-Min (Vsup) |
1.283 V
|
1.425 V
|
Supply Voltage-Nom (Vsup) |
1.35 V
|
1.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu)
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
10
|
Width |
10 mm
|
10 mm
|
Base Number Matches |
1
|
1
|
Date Of Intro |
|
2017-09-18
|
Moisture Sensitivity Level |
|
3
|
Operating Temperature-Max |
|
95 °C
|
Operating Temperature-Min |
|
-40 °C
|
Temperature Grade |
|
INDUSTRIAL
|
|
|
|
Compare MT41K512M16TNA-107:E with alternatives
Compare IS43TR16512B-093NBLI with alternatives