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MT41J512M4THR-187:D vs K4B2G0446C-HCF80 feature comparison

MT41J512M4THR-187:D Micron Technology Inc

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K4B2G0446C-HCF80 Samsung Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description LFBGA, BGA78,9X13,32 TFBGA, BGA78,9X13,32
Pin Count 78 78
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.36
Access Mode DUAL BANK PAGE BURST MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 533 MHz 533 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B78 R-PBGA-B78
JESD-609 Code e1 e1
Length 11.5 mm 11 mm
Memory Density 1073741824 bit 2147483648 bit
Memory IC Type DDR3 DRAM DDR3 DRAM
Memory Width 4 4
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 78 78
Number of Words 268435456 words 536870912 words
Number of Words Code 256000000 512000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 256MX4 512MX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LFBGA TFBGA
Package Equivalence Code BGA78,9X13,32 BGA78,9X13,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.35 mm 1.2 mm
Self Refresh YES YES
Standby Current-Max 0.02 A 0.012 A
Supply Current-Max 0.265 mA 0.16 mA
Supply Voltage-Max (Vsup) 1.575 V 1.575 V
Supply Voltage-Min (Vsup) 1.425 V 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 9 mm 7.5 mm
Base Number Matches 1 1
Access Time-Max 0.3 ns
Interleaved Burst Length 8
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Sequential Burst Length 8
Memory » DRAMs
Memory » DRAMs

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Compare K4B2G0446C-HCF80 with alternatives