MT41J1G4THU25:A
vs
MT41J512M4JE-187EIT:A
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
LFBGA,
|
TFBGA,
|
Pin Count |
82
|
82
|
Reach Compliance Code |
compliant
|
unknown
|
Access Mode |
DUAL BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B82
|
R-PBGA-B82
|
JESD-609 Code |
e1
|
e1
|
Length |
15 mm
|
15 mm
|
Memory Density |
2147483648 bit
|
268435456 bit
|
Memory IC Type |
DDR DRAM
|
DDR3 DRAM
|
Memory Width |
4
|
4
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
82
|
82
|
Number of Words |
536870912 words
|
67108864 words
|
Number of Words Code |
512000000
|
64000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
|
Operating Temperature-Min |
|
|
Organization |
512MX4
|
64MX4
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Peak Reflow Temperature (Cel) |
260
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.35 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
1.575 V
|
1.575 V
|
Supply Voltage-Min (Vsup) |
1.425 V
|
1.425 V
|
Supply Voltage-Nom (Vsup) |
1.5 V
|
1.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
|
Terminal Finish |
TIN SILVER COPPER
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Width |
12.5 mm
|
12.5 mm
|
Base Number Matches |
1
|
1
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8542.32.00.24
|
Self Refresh |
|
YES
|
|
|
|
Compare MT41J1G4THU25:A with alternatives
Compare MT41J512M4JE-187EIT:A with alternatives