MT36VDDT25672DY-26A vs M312L5628CU0-CA2 feature comparison

MT36VDDT25672DY-26A Micron Technology Inc

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M312L5628CU0-CA2 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description DIMM, DIMM184 DIMM, DIMM184
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.75 ns 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N184 R-XDMA-N184
Memory Density 19327352832 bit 19327352832 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Terminals 184 184
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256MX72 256MX72
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Standby Current-Max 0.18 A
Supply Current-Max 2.835 mA 7.54 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DIMM
Pin Count 184
Access Mode DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) NOT SPECIFIED
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MT36VDDT25672DY-26A with alternatives

Compare M312L5628CU0-CA2 with alternatives