MT36VDDF25672DY-40BXX vs M312L5720BG0-CB3 feature comparison

MT36VDDF25672DY-40BXX Micron Technology Inc

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M312L5720BG0-CB3 Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N184 R-XDMA-N184
JESD-609 Code e4
Memory Density 19327352832 bit 19327352832 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256MX72 256MX72
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.5 V 2.3 V
Supply Voltage-Nom (Vsup) 2.6 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 1
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code DIMM184
Refresh Cycles 8192
Standby Current-Max 0.68 A
Supply Current-Max 8.98 mA
Terminal Pitch 1.27 mm

Compare MT36VDDF25672DY-40BXX with alternatives

Compare M312L5720BG0-CB3 with alternatives