MT29F2G08ABBEAHC:E
vs
MT29F2G08ABBGAH4-IT:G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Package Description |
10.50 X 13 MM, 1 MM HEIGHT, VFBGA-63
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
25 ns
|
|
Command User Interface |
YES
|
|
Data Polling |
NO
|
|
JESD-30 Code |
R-PBGA-B63
|
|
Length |
13 mm
|
|
Memory Density |
2147483648 bit
|
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
|
Number of Functions |
1
|
|
Number of Sectors/Size |
2K
|
|
Number of Terminals |
63
|
|
Number of Words |
268435456 words
|
|
Number of Words Code |
256000000
|
|
Operating Mode |
ASYNCHRONOUS
|
|
Operating Temperature-Max |
70 °C
|
|
Operating Temperature-Min |
|
|
Organization |
256MX8
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Code |
VFBGA
|
|
Package Equivalence Code |
BGA63,10X12,32
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
|
Page Size |
2K words
|
|
Parallel/Serial |
PARALLEL
|
|
Programming Voltage |
1.8 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
|
Ready/Busy |
YES
|
|
Seated Height-Max |
1 mm
|
|
Sector Size |
128K
|
|
Standby Current-Max |
0.00005 A
|
|
Supply Current-Max |
0.02 mA
|
|
Supply Voltage-Max (Vsup) |
1.95 V
|
|
Supply Voltage-Min (Vsup) |
1.7 V
|
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
|
Surface Mount |
YES
|
|
Technology |
CMOS
|
|
Temperature Grade |
COMMERCIAL
|
|
Terminal Form |
BALL
|
|
Terminal Pitch |
0.8 mm
|
|
Terminal Position |
BOTTOM
|
|
Toggle Bit |
NO
|
|
Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
Width |
10.5 mm
|
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
18 Weeks, 1 Day
|
Samacsys Manufacturer |
|
Micron
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare MT29F2G08ABBEAHC:E with alternatives
Compare MT29F2G08ABBGAH4-IT:G with alternatives