MT28C64464W18ABW-F70P70BWT vs MT28C128564W18DFW-F605P70KTBWT feature comparison

MT28C64464W18ABW-F70P70BWT Micron Technology Inc

Buy Now Datasheet

MT28C128564W18DFW-F605P70KTBWT Micron Technology Inc

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICRON TECHNOLOGY INC
Part Package Code BGA BGA
Package Description TFBGA, BGA77,8X10,32 LFBGA,
Pin Count 77 77
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 70 ns
Additional Feature CELLULAR RAM IS ORGANIZED AS 4M X 16 CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
JESD-30 Code R-PBGA-B77 R-PBGA-B77
JESD-609 Code e1 e1
Length 10 mm 10 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT
Memory Width 16 16
Mixed Memory Type FLASH+SRAM
Number of Functions 1 1
Number of Terminals 77 77
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA LFBGA
Package Equivalence Code BGA77,8X10,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.4 mm
Standby Current-Max 0.000145 A
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1

Compare MT28C64464W18ABW-F70P70BWT with alternatives

Compare MT28C128564W18DFW-F605P70KTBWT with alternatives