MT18VDDF6472HY-26A vs W3HG64M72EEU806PD4GG feature comparison

MT18VDDF6472HY-26A Micron Technology Inc

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W3HG64M72EEU806PD4GG Microsemi Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICROSEMI CORP
Package Description DIMM, DIMM200,24 ,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200 R-XDMA-N200
JESD-609 Code e3 e4
Memory Density 4831838208 bit 4831838208 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Moisture Sensitivity Level 1
Number of Terminals 200 200
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Temperature-Max 65 °C 85 °C
Operating Temperature-Min
Organization 64MX72 64MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Supply Current-Max 4.23 mA
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL EXTENDED
Terminal Finish MATTE TIN GOLD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code MODULE
Pin Count 200
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V

Compare MT18VDDF6472HY-26A with alternatives

Compare W3HG64M72EEU806PD4GG with alternatives