MT16LSDT6464AY-133B1XX vs M366S6453DTU-C1L feature comparison

MT16LSDT6464AY-133B1XX Micron Technology Inc

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M366S6453DTU-C1L Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description , DIMM, DIMM168
Pin Count 168 168
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 5.4 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N168 R-XDMA-N168
JESD-609 Code e4
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 168 168
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Code DIMM
Package Equivalence Code DIMM168
Refresh Cycles 8192
Standby Current-Max 0.032 A
Supply Current-Max 1.76 mA
Terminal Pitch 1.27 mm

Compare MT16LSDT6464AY-133B1XX with alternatives

Compare M366S6453DTU-C1L with alternatives