MSPUPT10RTR13E3 vs MXUPT10RE3 feature comparison

MSPUPT10RTR13E3 Microsemi Corporation

Buy Now Datasheet

MXUPT10RE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-216AA DO-216AA
Package Description R-PDSO-G1 R-PDSO-G1
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW LEAKAGE CURRENT
Breakdown Voltage-Min 11 V 11 V
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code R-PDSO-G1 S-PSSO-G1
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 150 W 1000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Base Number Matches 1 3
Clamping Voltage-Max 18 V
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Reverse Current-Max 2 µA
Reverse Test Voltage 10 V

Compare MSPUPT10RTR13E3 with alternatives

Compare MXUPT10RE3 with alternatives