MSPSMCG6053E3 vs SMCJ33CR6G feature comparison

MSPSMCG6053E3 Microsemi Corporation

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SMCJ33CR6G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-215AB
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.9 V 44.9 V
Breakdown Voltage-Min 35.1 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-214AB
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 31 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 40.8 V
Clamping Voltage-Max 59 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

Compare MSPSMCG6053E3 with alternatives

Compare SMCJ33CR6G with alternatives