MSPSMBGP6KE13TR vs MQSMBJ11E3TR feature comparison

MSPSMBGP6KE13TR Microsemi Corporation

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MQSMBJ11E3TR Microsemi Corporation

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AA DO-214AA
Package Description R-PDSO-G2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 14.3 V 14.9 V
Breakdown Voltage-Min 11.7 V 12.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10.5 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Nom 13.55 V
Clamping Voltage-Max 20.1 V

Compare MSPSMBGP6KE13TR with alternatives

Compare MQSMBJ11E3TR with alternatives