MSPSMBG48E3 vs MASMBJP6KE62E3TR feature comparison

MSPSMBG48E3 Microsemi Corporation

Buy Now Datasheet

MASMBJP6KE62E3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AA DO-214AA
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 65.1 V 68.2 V
Breakdown Voltage-Min 53.3 V 55.8 V
Breakdown Voltage-Nom 59.2 V
Clamping Voltage-Max 85.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-214AA
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 48 V 50.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Additional Feature TR, 7 INCH: 750

Compare MSPSMBG48E3 with alternatives

Compare MASMBJP6KE62E3TR with alternatives