MSPSMAJP4KE110ATR vs P4SMA110AHE3_A/H feature comparison

MSPSMAJP4KE110ATR Microsemi Corporation

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P4SMA110AHE3_A/H Vishay Intertechnologies

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP VISHAY INTERTECHNOLOGY INC
Part Package Code DO-214BA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 116 V 116 V
Breakdown Voltage-Min 105 V 105 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 300 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 3.3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 94 V 94 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Factory Lead Time 8 Weeks
Breakdown Voltage-Nom 110 V
Clamping Voltage-Max 152 V
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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Compare P4SMA110AHE3_A/H with alternatives