MSP1N6271ATR
vs
1N6271
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
INTERNATIONAL SEMICONDUCTOR INC
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
10.5 V
11 V
Breakdown Voltage-Min
9.5 V
9 V
Breakdown Voltage-Nom
10 V
10 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
14.5 V
15 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.52 W
3 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
8.55 V
8.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
37
Additional Feature
LOW IMPEDANCE
JEDEC-95 Code
DO-201
Reverse Current-Max
10 µA
Compare MSP1N6271ATR with alternatives
Compare 1N6271 with alternatives