MSMCJLCE8.0AE3/TR
vs
SMCJ7.0A-E3/9AT
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
VISHAY SEMICONDUCTORS
Package Description
SMCJ, 2 PIN
R-PDSO-C2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.83 V
8.6 V
Breakdown Voltage-Min
8.89 V
7.78 V
Breakdown Voltage-Nom
9.36 V
8.19 V
Clamping Voltage-Max
13.6 V
12 V
Configuration
SINGLE
SINGLE
Diode Capacitance-Min
100 pF
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
6.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8 V
7 V
Reverse Current-Max
100 µA
Reverse Test Voltage
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
2
Pbfree Code
Part Package Code
DO-214AB
Pin Count
2
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare MSMCJLCE8.0AE3/TR with alternatives
Compare SMCJ7.0A-E3/9AT with alternatives